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| SPICE MODEL: DMMT5551 DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (DMMT5401) Ideal for Medium Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT) 1% Matched Tolerance, Available (Note 2) Available in Lead Free/RoHS Compliant Version (Note 5) K A SOT-26 BC Dim A B Min 0.35 1.50 2.70 3/4 3/4 2.90 1.00 0.35 0.10 0 Max 0.50 1.70 3.00 3/4 3/4 3.10 1.30 0.55 0.20 8 Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 3/4 H M C D F H J K L M Mechanical Data * * * * * * * * * Case: SOT-26 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Please see Ordering Information, Note 9, on Page 2 Marking (See Page 2): K4R & K4T Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approx.) J D F L 0.013 0.10 E1 E2 C2 C1 E1 C2 a All Dimensions in mm C1 B1 B2 B1 E2 B2 DMMT5551 (K4R Marking Code) DMMT5551S (K4T Marking Code) Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 180 160 6.0 200 300 417 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 3) Power Dissipation (Note 3, 4) Thermal Resistance, Junction to Ambient (Note 3) Operating and Storage and Temperature Range Notes: 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Maximum combined dissipation. 5. No purposefully added lead. DS30436 Rev. 4 - 2 1 of 3 www.diodes.com DMMT5551/DMMT5551S a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 3/4 3/4 80 80 30 3/4 3/4 3/4 50 100 3/4 Max 3/4 3/4 3/4 50 50 3/4 250 3/4 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain (Note 7) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hFE fT NF 6.0 250 300 8.0 pF 3/4 MHz dB Ordering Information Device DMMT5551-7 DMMT5551S-7 Notes: (Note 8) Packaging SOT-26 SOT-26 Shipping 3000/Tape & Reel 3000/Tape & Reel 6. Short duration test pulse used to minimize self-heating effect. 7. The DC Current Gain, h FE, (matched at I C = 10mA and VCE = 5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage, VBE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%. 8. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 9. For Lead Free/RoHS Compliant version part numbers, please add "-F" suffix to the part numbers above. Example: DMMT5551-7-F. Marking Information E1 E2 C2 C1 E1 C2 K4R C1 B1 K4R = DMMT5551 Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September B1 K4T E2 K4T = DMMT5551S Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September YM B2 B2 Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30436 Rev. 4 - 2 2 of 3 www.diodes.com YM DMMT5551/DMMT5551S 0.15 NEW PRODUCT 350 PD, POWER DISSIPATION (mW) 0.14 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 1 IC = 10 IB 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature TA = 150C TA = 25C TA = -50C 10 100 1000 1.0 1000 VCE = 5V TA = 150C hFE, DC CURRENT GAIN (NORMALIZED) IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 TA = 150C TA = 25C TA = -50C 100 TA = 25C TA = -50C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 100 DS30436 Rev. 4 - 2 3 of 3 www.diodes.com DMMT5551/DMMT5551S |
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